IRS21856S
Static Electrical Characteristics
(VCC-COM) = (VB-VS)=15V. TA = 25oC. The V IN , V IN TH and I IN parameters are referenced to COM. The V O
and I O parameters are referenced to respective VS, COM and are applicable to the respective output leads
HO1, LO3. The V CCUV parameters are referenced to COM. The V BSUV parameters are referenced to V S .
Symbol
V CCUV+
V CCUV-
V BSUV+
V BSUV-
I LK
I QBS
I QCC
V IH
Definition
V CC supply undervoltage positive going
threshold
V CC supply undervoltage negative
going threshold
V BS supply undervoltage positive going
threshold
V BS supply undervoltage negative
going threshold
High side floating well offset supply
leakage current
Quiescent VBS supply current
Quiescent VCC supply current
Logic “1” input voltage
Min
8.1
7.5
8.1
7.5
---
---
---
---
3.5
Typ
9.0
8.3
9.0
8.3
---
4.7
800
120
---
Max
9.9
9.1
9.9
9.1
50
8.5
1400
250
---
Units
V
μA
mA
μA
Test Conditions
V B = V S = 600V
IN1, 2 = 5V,
RES=130kohm
IN1, 2 = 0V,
RES=130kohm
IN1,2,3 = 0V or 5V
V IL
I IN +
Logic “0” input voltage
Logic “1” input bias current
---
---
---
5
0.8
---
V
V IN =5V
I IN -
Io+_
HO1,LO3
Io-_ HO1,LO3
V OL _
HO1, LO3
V OH _
HO1, LO3
DV exp+
Logic “0” input bias current
Output high short circuit pulsed current
Output low short circuit pulsed current
Low level output voltage
High level output voltage, Vbias-Vo
Positive DV input threshold for
exponential ramp
---
---
---
---
---
---
0
0.5
0.5
35
15
9.5
---
---
---
150
80
---
μA
A
mV
mV
V
V IN =0V
V O =15V,V IN =5V,
PW<=10us
V O =0V,V IN =0V,
PW<=10us
Io=2mA
Io=2mA
C REF =1nF, V SE open
R RES =130K
www.irf.com
9
? 2008 International Rectifier
相关PDF资料
IRS21858SPBF IC DVR LOW SIDE/DUAL HI 16-SOIC
IRS21864STRPBF IC DRIVER HI/LO SIDE 600V 14SOIC
IRS21867SPBF IC MOSFET DRIVER
IRS21952SPBF IC DVR HISIDE DUAL LOSIDE 16SOIC
IRS21953SPBF IC DVR HISIDE DUAL LOSIDE 16SOIC
IRS21956SPBF IC DVR HI SIDE/DUAL LOW 20-SOIC
IRS21962SPBF IC DVR HI SIDE DUAL 600V 16-SOIC
IRS2301SPBF IC DVR HI/LOW SIDE 600V 8-SOIC
相关代理商/技术参数
IRS21856STRPBF 功能描述:功率驱动器IC Ramp Slope Cntrl Driver Hi Volt RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21858SPBF 功能描述:功率驱动器IC Hig Dual Side DRVR 600V 290mA 160ns RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21858STRPBF 功能描述:功率驱动器IC Hi&Lw Sd Dual Drvr IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS2186 制造商:IRF 制造商全称:International Rectifier 功能描述:HIGH AND LOW SIDE DRIVER
IRS21864PBF 功能描述:功率驱动器IC Hi&Lw Sd Drvr capbl of 4A & 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21864PBF 制造商:International Rectifier 功能描述:MOSFET Driver IC
IRS21864SPbF 功能描述:功率驱动器IC HI LO SIDE DRVR 600V 10 to 20V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IRS21864SPBF 制造商:International Rectifier 功能描述:IC MOSFET DRIVER 制造商:International Rectifier 功能描述:IC, MOSFET DRIVER